发明名称 |
Phase change memory cell and devices containing same |
摘要 |
A device with a memory array is disclosed. In one embodiment, the memory array includes a plurality of memory cells, each including an electrode and a phase change material. The electrode may be disposed on a substrate, the electrode having a sublithographic lateral dimension parallel to the substrate. The phase change material may be coupled to the electrode and include a lateral dimension parallel to the substrate and greater than the sublithographic lateral dimension of the electrode.
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申请公布号 |
US8264061(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100917920 |
申请日期 |
2010.11.02 |
申请人 |
ZAHORIK RUSSELL C.;ROUND ROCK RESEARCH, LLC |
发明人 |
ZAHORIK RUSSELL C. |
分类号 |
H01L45/00;H01L21/44;H01L21/4763;H01L21/768;H01L47/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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