发明名称 |
Semiconductor structure with coincident lattice interlayer |
摘要 |
A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract. |
申请公布号 |
US8263976(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US201113104541 |
申请日期 |
2011.05.10 |
申请人 |
SCHULTZ BRIAN D.;MCGUIRE GARY ELDER;INTERNATIONAL TECHNOLOGY CENTER |
发明人 |
SCHULTZ BRIAN D.;MCGUIRE GARY ELDER |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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