发明名称 Method for manufacturing an exposure mask
摘要 A weak point detecting method of the present invention designs a target layout, and compensates an optical proximity effect for the target layout, thereafter, verifies the target layout in which the optical proximity effect is compensated by using an NILS of the target layout, thereby, enabling to reduce the time and cost in detecting a weak point for a full chip regardless of the size and form of a pattern.
申请公布号 US8266555(B2) 申请公布日期 2012.09.11
申请号 US20090494248 申请日期 2009.06.29
申请人 KIM CHEOL KYUN;HYNIX SEMICONDUCTOR INC 发明人 KIM CHEOL KYUN
分类号 G06F17/50 主分类号 G06F17/50
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