| 摘要 |
A silicon carbide semiconductor element, including: i) an n-type silicon carbide substrate doped with a dopant, such as nitrogen, at a concentration C, wherein the substrate has a lattice constant that decreases with doping; ii) an n-type silicon carbide epitaxially-grown layer doped with the dopant, but at a smaller concentration than the substrate; and iii) an n-type buffer layer doped with the dopant, and arranged between the substrate and the epitaxially-grown layer, wherein the buffer layer has a multilayer structure in which two or more layers having the same thickness are laminated, and is configured such that, based on a number of layers (N) in the multilayer structure, a doping concentration of a K-th layer from a silicon carbide epitaxially-grown layer side is C·K/(N+1). |
