| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve heat dissipation performance, stress relaxation performance and a bond strength at the same time. <P>SOLUTION: A semiconductor device includes a support base material 11 and a semiconductor element 15 bonded with the support base material 11 by a bonding material 16. The bonding material 16 includes a porous metal material 16a contacting the support base material 11 and the semiconductor element 15, and solder filled in at least a part of voids 16b in the porous metal material 16a. In the semiconductor device and the like, excellent heat dissipation performance and stress relaxation performance can be achieved by the porous metal material 16a, an excellent bond strength can be achieved by the solder 16c. <P>COPYRIGHT: (C)2012,JPO&INPIT |
