| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a lateral double diffused metal oxide semiconductor (LDMOS) transistor with high breakdown voltage that can achieve reduction in on-resistance. <P>SOLUTION: A semiconductor device comprises: a first semiconductor region of a second conductivity type disposed on a semiconductor substrate; a second semiconductor region of a first conductivity type embedded in a portion of the top surface of the first semiconductor region; a source region of the second conductivity type embedded in a portion of the top surface of the second semiconductor region; a drain region of the second conductivity type embedded, spaced apart from the second semiconductor region, in a portion of the top surface of the first semiconductor region; a gate electrode disposed between the source region and the drain region on the second semiconductor region; an insulating film disposed between the second semiconductor region and the drain region on the first semiconductor region; a voltage dividing element that is disposed on the insulating film and divides the voltage between the gate electrode and the drain region; and a charge-movement restriction element connected between the voltage dividing element and the drain region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
