发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND FAILURE DETECTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To identify a defective switch from a plurality of power supply switches that control power supply to a power supply separation circuit. <P>SOLUTION: A power supply switch group 21 comprises a plurality of power supply switches 120 to 122 that control connection between a first power supply 101 and a plurality of power supply terminals 103 to 105. A power supply separation circuit 11 comprises a plurality of internal circuits 140 to 142 connected so as to correspond to each of the plurality of power supply terminals 103 to 105. Switching elements 131 and 132 short-circuit between the plurality of power supply terminals 103 to 105 in a normal operation mode; and performs separation between the plurality of power supply terminals 103 to 105 in a test mode. Voltages VSD in the plurality of power supply terminals 103 to 105 are output to a plurality of monitor terminals 161 to 163 so that they can be monitored. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012173056(A) 申请公布日期 2012.09.10
申请号 JP20110033708 申请日期 2011.02.18
申请人 RENESAS ELECTRONICS CORP 发明人
分类号 G01R31/28;H01L21/822;H01L27/04 主分类号 G01R31/28
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