DEPOSITION METHOD, DEPOSITION APPARATUS, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a deposition method and a deposition apparatus of a cobalt film having low solubility into a plating liquid and excellent in barrier property against Cu diffusion in a single film.

SOLUTION: A deposition method of a carbon-containing cobalt film comprises: a process of conveying a wafer W into a processing chamber 1 of a deposition apparatus 100 and arranging the wafer W on a stage 3; a process of adjusting a pressure in the processing chamber 1 and a temperature of the wafer W; a process of depositing the carbon-containing cobalt film on a surface of the wafer W in a CVD method by supplying and mixing Co2(CO)8and acetylene in the processing chamber 1; a process of stopping supply of a deposition material and vacuuming the processing chamber 1; and a process of conveying the wafer W from the processing chamber 1.

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