| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device and a method therefor which are arranged so that even when performing a high-temperature uniform thermal treatment on a near-surface portion of a base material to be processed for a very short time, or when performing a low-temperature plasma processing on the base material while applying plasma of reactive gas or concurrently applying the plasma and reactive gas flow to the base material, a desired region of the base material can be wholly processed for a short time. <P>SOLUTION: The plasma processing device comprises a plasma torch unit T. The plasma torch unit T includes: a quartz block 4; a coil composed of an arcuate copper pipe 3 and disposed around the quartz block 4; and a plasma blowoff port 8 provided in a portion where the arc of the arcuate copper pipe 3 opens. In the plasma processing device, plasma is generated in a space 7 in a cylindrical chamber by providing a high frequency power to the copper pipe 3 while supplying gas to the space 7 in the cylindrical chamber, and is applied to the base material 2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
