发明名称 SUBSTRATE PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce a temperature of exhaust gas while restraining deterioration of an exhaust conductance and formation of a by-product in a substrate processing device for performing a heat treatment under a high-temperature condition. <P>SOLUTION: A substrate processing device comprises a processing chamber, in which a substrate is delivered and processed; a heating part for heating the substrate delivered in the processing chamber; a processing gas introduction part for introducing the processing gas in the processing chamber; an exhaust port connected to the processing chamber and exhausting atmosphere in the processing chamber as the exhaust gas; a gas exhaust pipeline connected to a gas flow downstream side of the exhaust port; a vacuum pump connected to a gas flow downstream end of the gas exhaust pipeline; a pressure control valve provided between the exhaust port and the vacuum pump in the gas exhaust pipeline; and an exhaust gas cooling device provided between the exhaust port and the pressure control valve and passing and cooling the exhaust gas. The exhaust gas cooling device has an inner pipe and an outer pipe. The exhaust gas is made to pass inside the inner pipe, so that a cooling medium flows in a space between the inner pipe and the outer pipe. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174725(A) 申请公布日期 2012.09.10
申请号 JP20110032325 申请日期 2011.02.17
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
代理机构 代理人
主权项
地址