| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stacked structure of a nitride semiconductor that can reduce the crystal defect density of a nitride semiconductor stack, to provide a method of manufacturing the same, and to provide a nitride semiconductor device. <P>SOLUTION: A stacked structure of a nitride semiconductor comprises; a substrate 10; a first buffer layer 12; a first crystalline layer 14; a second buffer layer 16; and a second crystalline layer 20. In a substrate 10, a step 10d is formed. The first buffer layer 12 contains InAlGaN and covers a bottom surface 10b of the step and a side surface 10c of the step. The first crystalline layer 14 is provided on the buffer layer 12, contains InAlGaN, and has a top surface 14a provided above a top surface 10a of the substrate 10. The second buffer layer 16 contains InAlGaN and continuously covers the top surface 14a of the first crystalline layer 14 and the top surface 10a of the substrate 10. The second crystalline layer 20 covers the second buffer layer 16, contains InAlGaN, and has a first surface 20a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
