| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device which can cope with the change in an operating condition such as the change in the temperature of a stage, and prevent the occurrence of inrush current, and the flow of excessive ESC current, and in which an electrostatic attraction force comparable to or exceeding a backside pressure is generated when a heat transfer gas is led thereinto. <P>SOLUTION: The plasma processing device comprises: a processing chamber for performing plasma processing on a substrate to be processed; plasma generation means for generating plasma in the processing chamber; and a stage provided in the processing chamber and having an electrostatic attraction film for holding the substrate to be processed. The plasma processing method in the plasma processing device comprises the steps of: detecting a current value of ESC current flowing between the electrostatic attraction film and the substrate to be processed; setting a condition of attraction based on the ESC current value; applying an attraction voltage to the stage in a stepwise manner so that the ESC current falls in a set control range while detecting the ESC current; and introducing a heat transfer gas after detection of the ESC current falling in the control range. <P>COPYRIGHT: (C)2012,JPO&INPIT |
