| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus which allow cleaning process to be carried out without exerting damage on a pattern on a substrate. <P>SOLUTION: After tertiary butanol is supplied to a substrate surface Wf, DIW is supplied to the substrate surface Wf, thereby allowing the tertiary butanol to remain only inside a pattern gap. Thereafter, the substrate is cooled to coagulate the tertiary butanol and DIW. The tertiary butanol has a high coagulation point with respect to the DIW, and has a small increase in volume when the tertiary butanol is coagulated. Therefore, before the DIW is coagulated, the tertiary butanol is coagulated inside the pattern gap, and structurally reinforces the pattern. Additionally, owing to the small increase in volume, the stress exerted on the pattern is smaller than the DIW. Hence, the substrate surface Wf can be cleaned while preventing damage on the pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
