| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device with both a high breakdown voltage characteristic and a low on-resistance characteristic. <P>SOLUTION: A compound semiconductor device includes: a nitride semiconductor laminate structure 4 including a carrier travel layer 2 and a carrier supply layer 3; a source electrode 5 and a drain electrode 6 provided above the nitride semiconductor laminate structure; a gate electrode 7 provided between the source electrode and the drain electrode above the nitride semiconductor laminate structure; a field plate 8 at least a part of which is provided between the gate electrode and the drain electrode; and a plurality of insulation films 9 and 10 formed above the nitride semiconductor laminate structure. The number of interfaces of the plurality of insulation films is smaller between the field plate and the drain electrode than in the vicinity of the gate electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
