摘要 |
<P>PROBLEM TO BE SOLVED: To suppress increase in the product cost by reducing the number of steps in the manufacturing method of a semiconductor device having a plurality of types of MOS transistor having characteristics different from each other. <P>SOLUTION: Gate electrodes 9a, 9b, 9c are formed in a high-speed transistor formation region HSn, a low leakage transistor formation region LLn, and a medium voltage transistor formation region MVn. Subsequently, a photoresist film 31 is formed to cover the transistor formation region MVn. Impurity ions are then implanted in a semiconductor substrate 1 by using the photoresist film 31 and the gate electrodes 9a, 9b as a mask, thus forming p-type pocket regions 42, 52, an extension region 43 and an impurity region 53. Thereafter, a photoresist film covering the transistor formation region HSn is formed. Finally, an impurity region and an extension region are formed by implanting impurity ions in the semiconductor substrate 1 by using the photoresist film and the gate electrodes 9b, 9c as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |