发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To suppress increase in the product cost by reducing the number of steps in the manufacturing method of a semiconductor device having a plurality of types of MOS transistor having characteristics different from each other. <P>SOLUTION: Gate electrodes 9a, 9b, 9c are formed in a high-speed transistor formation region HSn, a low leakage transistor formation region LLn, and a medium voltage transistor formation region MVn. Subsequently, a photoresist film 31 is formed to cover the transistor formation region MVn. Impurity ions are then implanted in a semiconductor substrate 1 by using the photoresist film 31 and the gate electrodes 9a, 9b as a mask, thus forming p-type pocket regions 42, 52, an extension region 43 and an impurity region 53. Thereafter, a photoresist film covering the transistor formation region HSn is formed. Finally, an impurity region and an extension region are formed by implanting impurity ions in the semiconductor substrate 1 by using the photoresist film and the gate electrodes 9b, 9c as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174958(A) 申请公布日期 2012.09.10
申请号 JP20110036704 申请日期 2011.02.23
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 ARIYOSHI JUNICHI
分类号 H01L21/8234;H01L21/8238;H01L27/088;H01L27/092 主分类号 H01L21/8234
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