发明名称 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY AND MAGNETIC RECORDER
摘要 <P>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element in which the MR change rate can be increased, and to provide a magnetic head assembly and a magnetic recorder. <P>SOLUTION: The magnetoresistance effect element includes a laminate, and a pair of electrodes for feeding a current in the lamination direction of the laminate. The laminate has a first magnetic layer, a second magnetic layer, and a spacer layer arranged between the first and second magnetic layers. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer consisting of a metal oxide, and the crystal structure of the metal oxide is NaCl structure. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174737(A) 申请公布日期 2012.09.10
申请号 JP20110032611 申请日期 2011.02.17
申请人 TOSHIBA CORP 发明人 FUJI YOSHIHIKO;HARA MICHIKO;FUKUZAWA HIDEAKI;YUASA HIROMI;MURAKAMI SHUICHI
分类号 H01L43/10;G11B5/39;H01L21/8246;H01L27/105;H01L43/08 主分类号 H01L43/10
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