发明名称 |
HIGH-FREQUENCY POWER SUPPLY DEVICE, PLASMA PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high-frequency power supply device and a plasma processing apparatus which are capable of improving power utilization efficiency, and to obtain a method for manufacturing a semiconductor thin film. <P>SOLUTION: The high-frequency power supply device for supplying high-frequency power to a fluctuating load comprises: a high-frequency power source; a circulator which is disposed between the high-frequency power source and the fluctuating load and separates reflected power received from the fluctuating load; an adjustment unit for adjusting a phase and an amplitude of the reflected power separated by the circulator; a power combining unit which combines power outputted from the high-frequency power source with the reflected power adjusted by the adjustment unit and outputs combined power to the circulator. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012174668(A) |
申请公布日期 |
2012.09.10 |
申请号 |
JP20110038868 |
申请日期 |
2011.02.24 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
IKEDA TOMOHIRO;TAKI MASAKAZU;TSUDA MUTSUMI;FUJIWARA NOBUO |
分类号 |
H05H1/46;C23C16/24;C23C16/509;H01L21/205;H01L21/31;H03F3/20 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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