| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device and a method therefor which are arranged so that even when performing a high-temperature uniform thermal treatment on a near-surface portion of a base material to be processed for a very short time, or when performing a low-temperature plasma processing on the base material while applying plasma of reactive gas or concurrently applying the plasma and reactive gas flow to the base material, a desired region of the base material can be wholly processed for a short time. <P>SOLUTION: The plasma processing device comprises a plasma torch unit T. The plasma torch unit T includes: a quartz block 4 having a copper-rod-insertion hole 12; a copper rod 3 which forms a coil as a whole, and is set in the copper-rod-insertion hole 12 of the quartz block 4; and a cooling-water pipe 15. The quartz block 4 is cooled by water flowing through the copper-rod-insertion hole 12 and the cooling-water pipe 15. The torch unit T further includes a plasma blowoff port 8 provided in the lowermost portion thereof. In the plasma processing device, plasma is generated in an elongated chamber internal space 7 by supplying a high frequency power to the copper rod 3 while providing gas to the elongated chamber internal space 7. The plasma is applied to the base material 2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
