SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to suppress a short channel effect by appropriately setting the depth of a trench for a gate electrode. CONSTITUTION: An insulating layer(130) is formed on a semiconductor substrate. A plurality of trenches is formed on the insulating layer. A wide gap semiconductor layer(144) is formed to cover the trench. A gate insulating layer(146) is formed between a gate electrode(148a,148b) and the wide gap semiconductor layer. A source electrode or a drain electrode is contacted to the wide gap semiconductor layer.