| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit a short circuit between contact plugs formed in such a way as to sandwich a butting part of gate electrodes, via voids formed in an insulation film of the butting part. <P>SOLUTION: On each of sidewalls SW facing at a butting part of gate electrodes G2 and G5, a liner insulation film 6 and an interlayer insulation film 7 are formed. Between the sidewalls SW, voids are prevented from occurring inside the interlayer insulation film 7 and the liner insulation film 6 by contacting the liner insulation films 6 formed on respective lateral walls of the sidewalls SW to block a clearance between the sidewalls SW. <P>COPYRIGHT: (C)2012,JPO&INPIT |
