| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal and a method of manufacturing silicon carbide single crystal capable of performing sublimation without residual raw material, even when the temperature gradient of the interior of a crucible interior is small. <P>SOLUTION: The apparatus for manufacturing a silicon carbide single crystal includes a crucible 50 and a heating coil 80. The crucible 50 includes a crucible body 30 having an opening section and in which a raw material 20 is disposed, and a lid body 40 covering the opening section of the crucible body 30. The heating coil 80 is positioned on the outer side of a side section 30b of the crucible body 30 and heats the crucible 50 by induction heating. The electric conductivity of a bottom section 30a is greater than the electric conductivity of the side section 30b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
