| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal wafer, suppressing crack generation on the silicon carbide single crystal wafer produced from a silicon carbide single crystal near a seed crystal to improve yield. <P>SOLUTION: A seed crystal 100 comprising silicon carbide is arranged on one side of a crucible 50, and a raw material 20 of a silicon carbide single crystal 300 is arranged on the opposite side of the crucible 50. Then, the raw material 20 is heated, to thereby grow the silicon carbide single crystal 300 on the seed crystal 100. Thereafter, the seed crystal 100 is removed from the crucible 50, and a surface layer of the seed crystal 100 facing to the lid 40 side of the crucible 50 is removed, and then the silicon carbide single crystal 300 is sliced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
