METHOD OF MAKING SEMICONDUCTOR STRUCTURE

摘要

FIELD: chemistry. ^ SUBSTANCE: semiconductor structure is formed by forming oxynitride porous silicon via nitration of plates with porous silicon at temperature 1000C in a diffusion furnace in an ammonia medium for 1-2 hours, followed by burning at temperature 1200C in an atmosphere of ammonia at pressure (9-10)106. ^ EFFECT: low density of defects, which provides processability, improves parameters, increases reliability and increases percentage yield. ^ 1 tbl