Lateral diffused MOS transistor and method for forming the same,申请号KR20040055699-传众专利搜索

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发明名称	Lateral diffused MOS transistor and method for forming the same
摘要
申请公布号	KR101180501(B1)	申请公布日期	2012.09.10
申请号	KR20040055699	申请日期	2004.07.16
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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