发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To reduce the concentration of oxygen mixed into a reflection layer, and enhance the reliability of a semiconductor light-emitting element. <P>SOLUTION: In a semiconductor light-emitting element 1 which includes a substrate, a buffer layer 20 provided on the substrate, a reflection layer 30 formed by laminating a plurality of pairs of low refractive index layers and high refractive index layers on the buffer layer 20, and a light-emitting layer 40 formed by laminating a first clad layer, an active layer and a second clad layer on the reflection layer 30, the buffer layer 20 includes an oxygen adsorption layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174876(A) 申请公布日期 2012.09.10
申请号 JP20110035118 申请日期 2011.02.21
申请人 HITACHI CABLE LTD 发明人
分类号 H01L33/02;H01L33/10 主分类号 H01L33/02
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