| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device provided with a high-resistance buffer layer that can be formed in a simple method, and to provide a manufacturing method of the same. <P>SOLUTION: By controlling an epitaxial growth temperature and a supply amount of an n-type impurity doping gas with supplying organic metal gallium as a material gas on a substrate, carbon resulting from the organic metal gallium is subjected to doping and epitaxial growth by serving a nitride gallium layer that achieves an intended resistance as a buffer layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
