| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image pickup device with superior pixel performance. <P>SOLUTION: A solid state image pickup device 21A comprises: a semiconductor substrate 22 that is constituted by a semiconductor and has a front surface and a back surface that face away from each other, a gate insulating film 25A deposited in a trench formed on the semiconductor substrate 22 so as to penetrate through the front surface and the back surface, and a gate electrode 26A buried in the trench via the gate insulating film 25 so as to be exposed on the back surface of the semiconductor substrate 22. The gate insulating film 25A and the gate electrode 26A are formed so as to protrude from the back surface, thereby providing an unevenness between a face of the back surface side of the semiconductor substrate 22 and an apical face of the back surface side of the gate electrode 26A. For example, the invention can be applied to an electronic device having an imaging function. <P>COPYRIGHT: (C)2012,JPO&INPIT |
