| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing method by which a hole having a high aspect ratio or the like can be formed in a silicon layer without reducing an etching rate. <P>SOLUTION: The substrate processing method comprises: etching a polycrystalline silicon layer 38 on a wafer by means of bromine cations 45a and bromine radicals 45b in plasma formed from a process gas containing hydrobromic gas, oxygen gas, and nitrogen trifluoride gas; then oxidizing a silicon bromide-based deposition 44 produced during the etching step by means of oxygen radicals 46 and nitrogen radicals 47 in plasma formed from a process gas containing oxygen gas and nitrogen gas into silicon oxide; and subsequently etching the silicon oxide by means of fluorine cations 48a and fluorine radicals 48b in plasma formed from a process gas containing argon gas, and nitrogen trifluoride gas, whereby the reduction in the etching rate of a hole 43 is prevented. <P>COPYRIGHT: (C)2012,JPO&INPIT |
