| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide means for shortening the time required for a gas phase decomposition reaction and improving the analytical sensitivity, in analyzing metallic contamination of a silicon wafer by a gas phase etching method. <P>SOLUTION: A method for analyzing metallic contamination of silicon wafer includes: a step for etching the surface layer region of a silicon wafer by bringing the silicon wafer to be analyzed into contact with a mixed gas of hydrogen fluoride gas, nitric acid gas, and nitrogen oxide gas; a step for heating the silicon wafer having been etched so that the surface exposed by etching has a temperature of 180°C or higher; a step for exposing the surface of the silicon wafer having been heated to hydrofluoric acid vapor; a step for collecting metal components on the surface of the silicon wafer having been exposed into an aqueous solution for recovery, and a step for analyzing the metal component in the aqueous solution for recovery. <P>COPYRIGHT: (C)2012,JPO&INPIT |
