发明名称 METHOD OF MANUFACTURING POLARIZATION ROTATION ELEMENT AND POLARIZATION ROTATION ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a polarization rotation element formed of a semiconductor material, capable of easily forming a core portion which is inclined with respect to a stacked surface of a substrate. <P>SOLUTION: A method of manufacturing a polarization rotation element comprises: a structure forming step of forming a structure 29 including a semiconductor substrate 3 and a convex portion 27, which projects from a stacked surface 3S of the semiconductor substrate 3 and extends along a first direction D1 which is parallel to the stacked surface 3S; a first semiconductor layer forming step of depositing the first semiconductor layer 33 such that the first semiconductor layer 33 includes a convex portion adjacent region 33A contacting the convex portion 27 and at least a part of the convex portion adjacent region 33A defines an inclined surface 33L; and a second semiconductor layer forming step of forming the second semiconductor layer such that the second semiconductor layer includes an inclined portion positioned on the inclined surface 33L. The inclined surface 33L extends along a second direction D2, which makes an acute angle &theta;A with the stacked surface 3S, and the inclined portion extends along the second direction D2 in a cross section which is vertical to the first direction D1. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012175571(A) 申请公布日期 2012.09.10
申请号 JP20110037545 申请日期 2011.02.23
申请人 SUMITOMO ELECTRIC IND LTD 发明人
分类号 H01P1/165;G02B5/30;H01P11/00 主分类号 H01P1/165
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