发明名称 HEAT RADIATION MATERIAL AND SEMICONDUCTOR UNIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a heat radiation material which overcomes disadvantages of inorganic based materials such as ceramic substrates and diamond substrates, which are high hardness and low processability, and a disadvantage of carbonaceous materials such as graphite films and carbon nano-tubes, which is low heat radiation. <P>SOLUTION: A surface of a graphite substrate is processed to form a nano-meter order irregular structure (Step 301). Further, a surface protection layer is formed on the surface (Step 302). <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174743(A) 申请公布日期 2012.09.10
申请号 JP20110032700 申请日期 2011.02.18
申请人 STANLEY ELECTRIC CO LTD 发明人
分类号 H01L23/373;H01L23/36;H05K7/20 主分类号 H01L23/373
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