| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bend sensor having high spatial resolution and enabling highly accurate measurement. <P>SOLUTION: The bend sensor has a first thin film transistor and a second thin film transistor on a flexible substrate. The substrate includes a flexible area and an inflexible area. The first thin film transistor and the second thin film transistor form a differential transistor pair. The first thin film transistor is formed in the flexible area and the second thin film transistor is formed in the inflexible area. Since the thin film transistors can be formed in micrometers, there can be provided the bend sensor having extremely high spatial resolution of several micrometers. <P>COPYRIGHT: (C)2012,JPO&INPIT |
