发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve the light extraction efficiency of the semiconductor light emitting device by forming an anti-reflection layer on a transparent electrode. CONSTITUTION: A light emitting structure is formed on a substrate(11). The light emitting structure includes a first conductive semiconductor layer(12), an active layer(13) and a second conductive semiconductor layer(14). A first electrode(17) is formed on the first conductive semiconductor layer. A second electrode(18) is formed on the second conductive semiconductor layer. The first and second electrodes are electrically connected to the first and second conductive semiconductor layers. |
申请公布号 |
KR20120099312(A) |
申请公布日期 |
2012.09.10 |
申请号 |
KR20110006411 |
申请日期 |
2011.01.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KO, HYUNG DUK;PARK, YONG JO;SONG, JUNG HOON;PARK, SEONG JU |
分类号 |
H01L33/36;H01L33/38;H01L33/44 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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