发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve the light extraction efficiency of the semiconductor light emitting device by forming an anti-reflection layer on a transparent electrode. CONSTITUTION: A light emitting structure is formed on a substrate(11). The light emitting structure includes a first conductive semiconductor layer(12), an active layer(13) and a second conductive semiconductor layer(14). A first electrode(17) is formed on the first conductive semiconductor layer. A second electrode(18) is formed on the second conductive semiconductor layer. The first and second electrodes are electrically connected to the first and second conductive semiconductor layers.
申请公布号 KR20120099312(A) 申请公布日期 2012.09.10
申请号 KR20110006411 申请日期 2011.01.21
申请人 SAMSUNG ELECTRONICS CO., LTD.;GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KO, HYUNG DUK;PARK, YONG JO;SONG, JUNG HOON;PARK, SEONG JU
分类号 H01L33/36;H01L33/38;H01L33/44 主分类号 H01L33/36
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