| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a compound semiconductor layer such that band energy discontinuity between laminated layers can be moderated. <P>SOLUTION: A compound semiconductor layer manufacturing method of forming a compound semiconductor surface layer 31 composed of a group Ib element, a group IIIb element and a group VIb element which have a composition different from that of a chalcopyrite compound semiconductor layer 30 on a surface of the chalcopyrite compound semiconductor layer 30 composed of a group Ib element, a group IIIb element and a group VIb element, comprises a first process of forming a semiconductor layer 31a composed of at least a group Ib element and a group VIb element, and a second process of immersing the semiconductor layer formed in the first process in a solution containing at least a compound containing a group IIIb element and a compound containing a group VIb element. <P>COPYRIGHT: (C)2012,JPO&INPIT |
