SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can stably reduce harmonic distortion without injecting an impurity into a silicon layer or a silicon substrate for compensation doping.

SOLUTION: A first insulating layer 20 is formed on a silicon substrate 10 and contacts the silicon substrate 10. Wiring lines 40 are formed on the first insulating layer 20. The impurity concentration of the silicon substrate 10 under the first insulating layer 20 is 2.0×1014cm-3or less.

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