| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a normally-off HEMT with reduced variation of threshold voltage in low cost. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming semiconductor layers 21 to 24 above a substrate 10; forming an opening to be a recess 51 in the semiconductor layers 23 and 24 by dry etching using a gas containing a fluorine component; diffusing fluorine attached to the side surfaces and the bottom surface of the recess 51 to the semiconductor layers 22 to 24 by heating the semiconductor layers to form a region containing fluorine; forming an insulating film 30 inside the recess 51 and on the semiconductor layers 22 to 24; and forming an electrode 41 in the region in which the recess 51 is formed via the insulating film 30. <P>COPYRIGHT: (C)2012,JPO&INPIT |
