发明名称 REFERENCE VOLTAGE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a reference voltage circuit which reduces the influence of an offset and finely adjusts temperature dependency so that a reference voltage can come closer to a target value, and to provide a semiconductor integrated circuit. <P>SOLUTION: The reference voltage circuit includes: a first amplifier AMPBM1 which has first and second input terminals and outputs a reference voltage VBGR; a first load element R1 and a first pn junction element Q1; second and third load elements R2 and R3 and a second pn junction element Q2; an offset voltage reduction circuit AMPBS1 for reducing an offset voltage between the first and second input terminals in the first amplifier; a connection node potential drawing circuit REG1 for drawing the potential of first and second connection nodes IP and IM; and area adjustment circuits PNPB1 and CAREA for adjusting the area of the second pn junction element Q2 according to the potential of the first and second connection nodes which has been drawn by the connection node potential drawing circuit. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174085(A) 申请公布日期 2012.09.10
申请号 JP20110036712 申请日期 2011.02.23
申请人 FUJITSU SEMICONDUCTOR LTD 发明人
分类号 G05F3/30 主分类号 G05F3/30
代理机构 代理人
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