| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the efficiency in the use of a target by improving the erosion profile of the target without requesting any complicated driving mechanism or the like in a magnetron type sputtering device. <P>SOLUTION: A magnetron type sputtering device includes: an outer circumferential magnet 1 arranged along an outer circumferential edge of a back side of a target; an inner circumferential shim 6 circumferentially arranged on the inner circumferential side of the outer circumferential magnet 1 with a spacing from the outer circumferential magnet 1; and a center shim 7 which extends along the major axis direction of the target at a center part of the back side of the target, and is arranged with a spacing from the inner circumferential side of the inner circumferential shim 6. The outer circumferential magnet 1 includes: major axis magnet parts 2, 3 which are located at both ends in the minor axis direction of the target, and extend in the major axis direction with polarity different from each other; and minor axis magnet parts 2a, 2b, 3a, 3b which are located at both ends in the major axis direction, divided into two in the longitudinal direction, and have magnetic poles with the same polarity as the adjacent major axis magnet parts 2, 3. The generated plasma density is uniform, and erosion of the target is made uniform. <P>COPYRIGHT: (C)2012,JPO&INPIT |
