| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer, the wafer has little particles and has an excellent flatness by reforming shape of a chamfer and removing a back surface crown completely. <P>SOLUTION: A method of manufacturing an epitaxial wafer by growing an epitaxial layer on a single crystal silicon substrate consisting of front and back principal surfaces and a chamfer on a periphery of the principal surfaces, includes: a step of forming a back surface oxide film on the whole back side principal surface and on the back side chamfer of the single crystal silicon substrate; a step of growing an epitaxial layer having a film thickness of 40 μm or more on the front side principal surface of the single crystal silicon substrate to which the back surface oxide film is formed; a step of forming a protection oxide film on the epitaxial layer surface; a steps of grinding and polishing the chamfer of the single crystal silicon substrate to which the protection oxide film is formed; and a step of removing the protection oxide film and performing finish cleaning after the grinding and polishing steps. <P>COPYRIGHT: (C)2012,JPO&INPIT |
