| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of evaluating a metal impurity concentration in a P-type silicon wafer such that high-precision evaluation is possible over the entire wafer surface. <P>SOLUTION: There is provided the evaluation method for the metal impurity concentration of the P-type silicon wafer including the steps of: (A) determining the correlation between a carrier recombination center concentration and a bulk metal impurity concentration except Fe using a P-type monitoring silicon wafer; (B) measuring a carrier recombination center concentration of the P-type silicon wafer to be evaluated except Fe by an SPV method; and (C) calculating a bulk metal impurity concentration of the P-type silicon wafer to be evaluated based upon the carrier recombination center concentration except Fe measured in the step (B) and the correlation predetermined in the step (A). <P>COPYRIGHT: (C)2012,JPO&INPIT |
