| 摘要 |
PURPOSE: A solid state imaging element, a manufacturing method thereof and an electronic device are provided to improve image quality and optical sensitivity by preventing the generation of noise due to a defect level at the interface side of a charge accumulation unit. CONSTITUTION: A wiring layer(21) has a multilayered wiring structure. A transfer gate(TG) is covered by an inter-layer insulation film(25). A semiconductor layer(31) is separated into a plurality of charge accumulation units(35). The charge accumulation unit is directly connected to a photoelectric conversion film(41) through an opening(H). The photoelectric conversion film is isolated from a photoelectric conversion unit(45) by an element isolation(43). A wiring(27) is connected to the semiconductor layer via a connection hole(25a). |
