NON-VOLATILE RESISTANCE VARIABLE ELEMENT

摘要

PROBLEM TO BE SOLVED: To suppress deterioration of insulating properties of a resistance variable layer which reversibly varies resistance by letting metal enter and leave an electrode.

SOLUTION: A resistance variable layer 2 contains a semiconductor element, and is capable of reversibly varying resistance by letting a metallic element of a second electrode 4 enter and leave. A dielectric layer 3 is inserted between the second electrode 4 and the resistance variable layer 2. A diffusion coefficient of the metallic element of the second electrode 4 is smaller than that of the resistance variable layer 2.

COPYRIGHT: (C)2012,JPO&INPIT