SOI LATERAL MOSFET DEVICE AND INTEGRATED CIRCUIT THEREOF

摘要

A silicon-on-insulator (SOI) lateral MOSFET device and the integrated circuit thereof are provided. In said device, an active layer (3) includes a body region (9) and a drain region (12) which are located on the surface of the active layer (3) respectively and are separated from each other, and also a planar gate channel region (14'), a source region (11a), a body contact region (10) and a source region (11b) which are located on the surface of the body region (9) and are set in sequence from the side adjacent to the drain region (12). The active layer (3) located between the body region (9) and the drain region (12) is a drift region, wherein the drift region and the body region (9) have opposite conduction types. A semiconductor buried layer (4) is set beneath the surface of the active layer (3), wherein the semiconductor buried layer (4) and the body region (9) have the same conduction type. Said device has a trench gate structure (8) and a planar gate structure (8'), wherein the trench gate structure (8) contacts with the body region (9) and longitudinally extends from the surface of the active layer (3) to a dielectric buried layer (2), and the planar gate structure (8') is formed above the body region (9). Said device has the advantages of high withstand voltage, low specific on-resistance, low power consumption, low cost, and easy miniaturization and integration.