FIELD EFFECT TRANSISTOR HAVING A DOPED GATE ELECTRODE WITH REDUCED GATE DEPLETION AND METHOD OF FORMING THE TRANSISTOR,申请号KR20067002206-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR HAVING A DOPED GATE ELECTRODE WITH REDUCED GATE DEPLETION AND METHOD OF FORMING THE TRANSISTOR
摘要
申请公布号	KR101180976(B1)	申请公布日期	2012.09.07
申请号	KR20067002206	申请日期	2004.06.04
申请人		发明人
分类号	H01L21/336;H01L29/49;H01L29/786	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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