发明名称 NITRIDE-BASED LIGHT EMITTING ELEMENT USING PATTERNED LATTICE BUFFER LAYER AND METHOD FOR MANUFACTURING SAME
摘要 <p>Disclosed is a nitride-based light emitting element, which can improve the crystallinity of the nitride by using a patterned lattice buffer layer and can improve luminance by forming an air hole, and a method for manufacturing same. The method for manufacturing the nitride-based light-emitting element, according to the present invention, comprises the following steps: (a) forming a deposited layer by depositing on a substrate substance having a wurzite lattice structure; (b) forming the patterned lattice buffer layer by forming an etching pattern on the surface of the deposited layer; and (c) growing nitride on the patterned lattice buffer layer, wherein the patterned lattice buffer layer is removed from step (c) to form an air gap in the removed portion.</p>
申请公布号 WO2012118250(A1) 申请公布日期 2012.09.07
申请号 WO2011KR04060 申请日期 2011.06.03
申请人 SEMIMATERIALS CO., LTD.;JIN, JOO;PARK, KUN 发明人 JIN, JOO;PARK, KUN
分类号 H01L33/12;H01L33/04 主分类号 H01L33/12
代理机构 代理人
主权项
地址