Semiconductor substrate manufacturing method for forming e.g. semiconductor device, involves forming metal layer, and separating transfer layer from donor structure to form composite substrate comprising transfer layer and metal layer

摘要

The method involves forming a weakened area (220) in a donor structure (210) to predetermined depth to define a transfer layer (230). A metal layer is formed on a mounting surface, where coefficient of thermal expansion of the metal layer corresponds closely to coefficient of thermal expansion of the transfer layer. The metal layer is allowed to provide sufficient rigidity to provide structural support to the transfer layer. The transfer layer is separated from the donor structure to form a composite substrate comprising the transfer layer and the metal layer.