INDIUM TARGET AND METHOD FOR MANUFACTURING SAME

摘要

Provided is an indium target, which has high film formation rate with low initial discharge voltage, and furthermore, which has stable film formation rate and stable discharge voltage from start to completion of sputtering. Also provided is a method for manufacturing the indium target. The indium target has a crystal grain aspect ratio (length in the longer direction/length in the shorter direction) of 2.0 or less when observed from the cross-sectional direction of the target.