发明名称 |
SEMICONDUCTOR LASERS WITH INDIUM CONTAINING CLADDING LAYERS |
摘要 |
<p>An embodiment of semiconductor laser comprising: (a) a GaN, AlGaN, InGaN, or AlN substrate; (b) an n-doped cladding layer situated over the substrate; (c) a p-doped cladding layer situated over the n-doped; (d) at least one active layer situated between the n-doped and the p-doped cladding layer, and at least one of said cladding layers comprises a superstructure structure of AlInGaN/GaN, AlInGaN/AlGaN, AlInGaN//InGaN or AlInGaN/AlN with the composition such that the total of lattice mismatch strain of the whole structure does not exceed 40 nm%.</p> |
申请公布号 |
WO2012118596(A1) |
申请公布日期 |
2012.09.07 |
申请号 |
WO2012US23629 |
申请日期 |
2012.02.02 |
申请人 |
CORNING INCORPORATED;BHAT, RAJARAM;SIZOV, DMITRY SERGEEVICH;ZAH, CHUNG-EN |
发明人 |
BHAT, RAJARAM;SIZOV, DMITRY SERGEEVICH;ZAH, CHUNG-EN |
分类号 |
H01S5/343;H01S5/32 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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