| 摘要 |
<p>Provided are a sintered oxide and a sputtering target which are suitable for use in producing an oxide semiconductor film for display devices and combine high electroconductivity with a high relative density and with which it is possible to form an oxide semiconductor film having a high carrier mobility. In particular, even when used in production by a direct-current sputtering method, the sintered oxide and the sputtering target are less apt to generate nodules and have excellent direct-current discharge stability which renders long-term stable discharge possible. This sintered oxide is a sintered oxide obtained by mixing zinc oxide, tin oxide, and an oxide of at least one metal (metal M) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta and sintering the mixture, the sintered oxide having a Vickers hardness of 400 Hv or higher.</p> |
