COPPER-TITANIUM ALLOY SPUTTERING TARGET, SEMICONDUCTOR WIRING LINE FORMED USING THE SPUTTERING TARGET, AND SEMICONDUCTOR ELEMENT AND DEVICE EACH EQUIPPED WITH THE SEMICONDUCTOR WIRING LINE

摘要

A copper-titanium alloy sputtering target comprising 3 at% or more and less than 15 at% of Ti and a remainder made up by Cu and unavoidable impurities, and characterized in that the deviation (standard deviation) of the values of hardness is within ± 5.0 and the deviation (standard deviation) of the values of electric resistance is within ± 1.0 when observed in the in-plane direction of the target. Provided are: a sputtering target for producing a copper-titanium alloy wiring line for semiconductors, which can impart a function of preventing self-diffusion to a copper alloy wiring line for semiconductors and therefore can effectively prevent the occurrence of the contamination around the wiring line caused by the diffusion of active Cu, and can improve electromigration (EM) resistance, corrosion resistance and the like of the copper alloy wiring line, and in which a barrier layer can be formed arbitrarily and readily and uniformized film properties can be achieved; a copper-titanium alloy wiring line for semiconductors; and a semiconductor element and a device each equipped with the semiconductor wiring line.